College of Engineering

A master thesis was discussed in Department of Electrical Engineering / College of Engineering / University of Mosul entitled “Study and design of high frequency class E and class F power amplifiers for third generation mobile communication” submitted by postgraduate student (Zahraa Muhammad Younis Saed Islam), supervised by Prof. Dr. Khaled Khalil Muhammad on Monday, Nov. 29, 2021.The thesis included a class E and a class F Power Amplifiers are designed for LTE mobile communication with a single GaAs FET transistor at the frequency (1800MHz) using the Advanced Design System (ADS) software.The single transistor class E PA shows a maximum Power Added Efficiency (PAE) of 80.771% with an output power of 30.555dBm, and the maximum gain of 10.251dB at an output power of 27.715 dBm, The harmonic power levels of the power amplifier circuit utilized for a single tone were kept below -60dBc throughout the output power range of 18 to 30dBm using the single tone circuit , The amount of distortion produced by IMD3 and IMD5 less than (-13dBc) (-24dBc) respectively, when testing the two tone . A Feedforward linearization type of linearization technique is tested in order to improve the linearity of the designed class E PA. The ACPR less than -45dBc and the PAPR equal 5.64dB at output power 32dBm.The single transistor class F PA shows a maximum Power Added Efficiency (PAE) of 76.799% with an output power of 28.007dBm, and the maximum gain of 9.445dB at an output power of 24.445 dBm, The harmonic power levels of the power amplifier circuit utilized for a single tone were kept below -40dBc throughout the output power range of 18 to 30dBm using the single tone circuit , The amount of distortion produced by IMD3 and IMD5 less than (-20dBc) (-40dBc) respectively, when testing the two tone . A Feedforward linearization type of linearization technique is tested in order to improve the linearity of the designed class F PA. The ACPR less than -40dBc and PAPR equal 6.156dB at output power 33.05dBm.