College of Engineering

A Master thesis was discussed in Department of Electrical Engineering / College of Engineering at University of Mosul entitled “Investigation of the GaN-HEMT Device Performance in High Temperature Environment” submitted by ( Rand Sabah Ismail ), Supervised By Assist. Prof. Dr. Mohammad Tariq Yaseen On Thursday, December, 26, 2024.
The thesis aimed to investigate the performance of the GaN HEMT device in a high-temperature environment, and to study the effect of these high temperatures on its electrical properties.
The thesis addressed the effect of high temperatures on the performance of the GaN HEMT device, as it focused on studying the relationship between temperature and the electrical properties of the device.
The results showed that the breakdown voltage of the GaN HEMT device is affected by temperature differences. Specifically, the study showed that the use of the Si₃N₄ damping layer leads to an increase in the breakdown voltage with increasing temperature, while the breakdown voltage decreases when using the SiO₂ and Al₂O₃ damping layers.
The results also showed that reducing the thickness of the damping layer from 0.5 micrometers to 0.3 micrometers leads to a 30% decrease in the breakdown voltage. These results highlight the importance of improving the thickness of the damping layer to ensure achieving the optimal performance of the GaN HEMT device .